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HiPerDynFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface Preliminary Data Sheet
VRSM V 600 600 VRRM V 600 600 DSEA 16-06BC DSEC 16-06BC
1 2 3 DSEA
IFAV VRRM trr
DSEA 16-06BC DSEC 16-06BC = 2x8 A = 600 V = 30 ns
ISOPLUS220TM E153432
2 3
Type
1 DSEC
G
D
S
Isolated back surface
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight
Conditions TC = 110C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 0.9 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive
Maximum Ratings 19 8 50 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A C C C C W V~ N / lb g Applications Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15pF) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
1.6 mm (0.063 in) from case for 10 s TC = 25C 50/60 Hz RMS; IISOL 1 mA mounting force with clip
260 60 2500 11...65 / 2.5...15 2
Symbol IR VF RthJC RthCH trr IRM
Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 8 A; TVJ = 150C TVJ = 25C
Characteristic Values typ. max. 60 0.25 1.65 3.0 2.5 0.4 A mA V V
IF = 1 A; -di/dt = 50 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 12 A; -diF/dt = 100 A/s TVJ = 100C
30 1.4 1.9
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse test: pulse Width = 300 s, Duty Cycle < 2.0 %
K/W Advantages K/W Avalanche voltage rated for reliable ns operation Soft reverse recovery for low EMI/RFI Low IRM reduces: A - Power dissipation within the diode - Turn-on loss in the commutating switch
IXYS reserves the right to change limits, test conditions and dimensions. (c) 2005 IXYS All rights reserved
DS98825A (04/05)
DSEA 16-06BC DSEC 16-06BC
30 A 25 IF TVJ = 150C 20 15 10 5 0 TVJ = 25C 0 1 2 VF 3 V 50 2 TVJ = 100C 250 nC 200 Qr 150 TVJ = 100C VR = 300 V IRM IF = 5 A IF = 10 A IF = 20 A 100 4 TVJ = 100C VR = 300 V 10 A 8 IF = 5 A IF = 10 A IF = 20 A
6
0 100
A/s 1000 -diF/dt
0
0
200
400
600 A/s 1000 800 -diF/dt
Fig. 1. Forward current IF versus VF
Fig. 2. Reverse recovery charge Qr versus -diF/dt
ns 100 TVJ = 100C VR = 300 V VFR 80 IF = 5 A IF = 10 A IF = 20 A 60
Fig. 3. Peak reverse current IRM versus -diF/dt
60 V TVJ = 100C IF = 10 A 0.3 s tfr
2.0
1.5 Kf 1.0 IRM 0.5 Qr 0.0
trr
40
0.2
20 VFR
tfr
0.1
40 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/s 1000 0 0 200 400 0.0 600 A/s 1000 800 diF/dt
0
40
Fig. 4. Dynamic parameters Qr, IRM versus TVJ
10 K/W 1 ZthJC 0.1
Fig. 5. Recovery time trr versus -diF/dt
Fig. 6. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 1.449 0.5578 0.4931 ti (s) 0.0052 0.0003 0.0169
0.01
0.001 0.00001
DSEP 8-06B
0.0001
0.001
0.01
0.1
s t
NOTE: Fig. 2 to Fig. 6 shows typical values
1
Fig. 7. Transient thermal resistance junction-to-case (c) 2005 IXYS All rights reserved
DSEA 16-06BC DSEC 16-06BC
ISOPLUS220 OUTLINE ISOPLUS220 Outline
Notes: 1. All terminals are tin plated. 2. Back surface (4) is electrically isolated from pins 1,2 and 3. Pin connections: DSEA: 1 - Cathode 2 - Anode 3 - Cathode DSEC: 1 -Anode 2 - Cathode 3 - Anode
(c) 2005 IXYS All rights reserved

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